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Freescale Semiconductor Technical Data
Document Number: MD7IC18120N www..com Rev. 0, 5/2010
RF LDMOS Wideband Integrated Power Amplifiers
The MD7IC18120N/GN wideband integrated circuit is designed with on--chip matching that makes it usable from 1805 to 1880 MHz. This multi--stage structure is rated for 26 to 32 Volt operation and covers all typical cellular base station modulation formats. * Typical Doherty Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ1A = 70 mA, IDQ1B = 160 mA, IDQ2B = 500 mA, VGS2A = 1.7 Vdc, Pout = 30 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.
Frequency 1805 MHz 1840 MHz 1880 MHz Gps (dB) 25.7 25.7 25.8 PAE (%) 36.7 36.3 35.3 Output PAR (dB) 6.9 6.9 6.7
MD7IC18120NR1 MD7IC18120GNR1
1805-1880 MHz, 30 W AVG., 28 V SINGLE W-CDMA RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIERS
CASE 1866-02 TO-270 WBL-16 PLASTIC MD7IC18120NR1
* Capable of Handling 10:1 VSWR, @ 32 Vdc, 1840 MHz, 140 Watts CW Output Power * Stable into a 5:1 VSWR. All Spurs Below --60 dBc @ 100 Watts CW Pout * Typical Pout @ 1 dB Compression Point 120 Watts CW Features * Production Tested in a Symmetrical Doherty Configuration * 100% PAR Tested for Guaranteed Output Power Capability * Characterized with Large--Signal Load--Pull Parameters and Common Source S--Parameters * On--Chip Matching (50 Ohm Input, DC Blocked) * Integrated Quiescent Current Temperature Compensation with Enable/Disable Function (1) * Integrated ESD Protection * Greater Negative Gate--Source Voltage Range for Improved Class C Operation * 225C Capable Plastic Package * RoHS Compliant * In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
VDS1A VGS2A VGS1A N.C. VDS1A VGS2A VGS1A N.C. RFinA N.C. N.C. RFinB N.C. VGS1B VGS2B VDS1B N.C. 1 2 3 4 5 6 7 8 9 10 11 12 13 14
CASE 1867-02 TO-270 WBL-16 GULL PLASTIC MD7IC18120GNR1
Quiescent Current Temperature Compensation (1) PEAKING (2)
16
RFoutA/VDS2A
RFinA
RFoutA/VDS2A
15
RFoutB/VDS2B
RFinB
RFoutB/VDS2B CARRIER (2)
VGS1B VGS2B VDS1B
Quiescent Current Temperature Compensation (1)
(Top View) Note: Exposed backside of the package is the source terminal for the transistors.
Figure 1. Functional Block Diagram
Figure 2. Pin Connections
1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1977 or AN1987. 2. Peaking and Carrier orientation is determined by the test fixture design.
(c) Freescale Semiconductor, Inc., 2010. All rights reserved.
MD7IC18120NR1 MD7IC18120GNR1 1
RF Device Data Freescale Semiconductor
Table 1. Maximum Ratings
Rating Drain--Source Voltage Gate--Source Voltage Operating Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature (1,2) CW Operation @ TC = 25C Derate above 25C Input Power Symbol VDSS VGS VDD Tstg TC TJ CW Pin Value --0.5, +65 --6.0, +10 32, +0 --65 to +150 150 225 175 1.5 30
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Unit Vdc Vdc Vdc C C C W W/C dBm
Table 2. Thermal Characteristics
Characteristic Final Doherty Application Thermal Resistance, Junction to Case Case Temperature 78C, Pout = 30 W CW, 1880 MHz Stage 1A, 28 Vdc, IDQ1A = 70 mA Stage 1B, 28 Vdc, IDQ1B = 160 mA Stage 2A, 28 Vdc, VG2A = 1.7 Vdc Stage 2B, 28 Vdc, IDQ2B = 500 mA RJC 4.5 4.5 0.88 0.88 C/W Symbol Value (2,3) Unit
Table 3. ESD Protection Characteristics
Test Methodology Human Body Model (per JESD22--A114) Machine Model (per EIA/JESD22--A115) Charge Device Model (per JESD22--C101) Class 2 (Minimum) A (Minimum) III (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology Per JESD22--A113, IPC/JEDEC J--STD--020 Rating 3 Package Peak Temperature 260 Unit C
1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955.
MD7IC18120NR1 MD7IC18120GNR1 2 RF Device Data Freescale Semiconductor
Table 5. Electrical Characteristics (TA = 25C unless otherwise noted)
Characteristic Stage 1 -- Off Characteristics (1) Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate--Source Leakage Current (VGS = 1.5 Vdc, VDS = 0 Vdc) Stage 1 -- On Characteristics (1) Gate Threshold Voltage (VDS = 10 Vdc, ID = 28 Adc) Gate Quiescent Voltage (VDS = 28 Vdc, IDQ1A = 70 mA, IDQ1B = 160 mA) Fixture Gate Quiescent Voltage (VDD = 28 Vdc, Measured in Functional Test) Stage 2 -- Off Characteristics (1) Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate--Source Leakage Current (VGS = 1.5 Vdc, VDS = 0 Vdc) Stage 2 -- On Characteristics (1) Gate Threshold Voltage (VDS = 10 Vdc, ID = 185 Adc) Gate Quiescent Voltage (VDS = 28 Vdc, IDQ2B = 500 mA) Fixture Gate Quiescent Voltage (VDD = 28 Vdc, IDQ2B = 500 mA, Measured in Functional Test) Drain--Source On--Voltage (VGS = 10 Vdc, ID = 1.8 Adc) VGS(th) VGS(Q) VGG(Q) VDS(on) 1.2 -- 5.3 -- 2.0 2.6 6.3 0.35 IDSS IDSS IGSS -- -- -- -- -- -- IDQ1A = 70 mA IDQ1B = 160 mA VGS(th) VGS(Q) VGG(Q) 1.2 -- 4.0 7.1 2.0 2.9 5.0 8.1 IDSS IDSS IGSS -- -- -- -- -- -- Symbol Min Typ
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Max 10 1 1
Unit
Adc Adc Adc
2.7 -- 6.0 9.1
Vdc Vdc Vdc
10 1 1
Adc Adc Adc
2.7 -- 7.3 --
Vdc Vdc Vdc Vdc
Functional Tests (2,3,4) (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1A = 70 mA, IDQ1B = 160 mA, IDQ2B = 500 mA, VGS2A = 1.7 Vdc, Pout = 30 W Avg., f = 1880 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. Power Gain Power Added Efficiency Output Peak--to--Average Ratio @ 0.01% Probability on CCDF 1. 2. 3. 4. Gps PAE PAR 24.0 33.0 6.0 25.8 35.3 6.7 28.0 -- -- dB % dB
Each side of device measured separately. Part internally matched both on input and output. Measurement made with device in a Symmetrical Doherty configuration. Measurement made with device in straight lead configuration before any lead forming operation is applied. (continued)
MD7IC18120NR1 MD7IC18120GNR1 RF Device Data Freescale Semiconductor 3
Table 5. Electrical Characteristics (TA = 25C unless otherwise noted) (continued)
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Typical Broadband Performance (1) (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1A = 70 mA, IDQ1B = 160 mA, IDQ2B = 500 mA, VGS2A = 1.7 Vdc, Pout = 30 W Avg., Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. Frequency 1805 MHz 1840 MHz 1880 MHz
(1)
Gps (dB) 25.7 25.7 25.8
PAE (%) 36.7 36.3 35.3
Output PAR (dB) 6.9 6.9 6.7
Typical Performances (In Freescale Doherty Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1A = 70 mA, IDQ1B = 160 mA, IDQ2B = 500 mA, VGS2A = 1.7 Vdc, 1805--1880 MHz Bandwidth Characteristic Pout @ 1 dB Compression Point, CW IMD Symmetry @ 30 W PEP, Pout where IMD Third Order Intermodulation 30 dBc (Delta IMD Third Order Intermodulation between Upper and Lower Sidebands > 2 dB) VBW Resonance Point (IMD Third Order Intermodulation Inflection Point) Gain Flatness in 75 MHz Bandwidth @ Pout = 30 W Avg. Quiescent Current Accuracy over Temperature with 2 k Gate Feed Resistors (--30 to 85C) (2) Gain Variation over Temperature (--30C to +85C) Output Power Variation over Temperature (--30C to +85C) Stage 1 Stage 2 Symbol P1dB IMDsym Min -- -- Typ 120 15 Max -- -- Unit W MHz
VBWres GF IQT G P1dB
-- -- -- -- --
35 0.3 4.26 5.04 0.04 0.04
-- -- -- -- --
MHz dB % dB/C dBm/C
1. Measurement made with device in a Symmetrical Doherty configuration. 2. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1977 or AN1987.
MD7IC18120NR1 MD7IC18120GNR1 4 RF Device Data Freescale Semiconductor
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C25 VGG2A VGG1A R4 R2 C7 R1 Z1 C8 R3 R5 VGG1B VGG2B C2 VDD1B VDD1A C1 C3 L1 R10 C5 R6 R8 C9 C10 R9 R7 C6 R11 L2 C4 C C26 C17 C15 C19 C21 C22 C20 C16 C18 P R12 C13 C27
VDD2A
L3
C11 C23 C24
C12 L4
C14 R13 C28 VDD2B MD7IC18120N Rev. 2
Figure 3. MD7IC18120NR1(GNR1) Test Circuit Component Layout
Table 6. MD7IC18120NR1(GNR1) Test Circuit Component Designations and Values
Part C1, C2, C27, C28 C3, C4, C5, C6, C7, C8 C9, C10, C11, C13, C14 C12 C15, C16, C17, C18 C19, C20 C21, C22, C23 C24 C25, C26 L1, L2 L3, L4 R1 R2, R3, R4, R5, R6, R7, R8, R9 R10, R11, R12, R13 Z1 PCB Description 10 F, 50 V Chip Capacitors 0.1 F Chip Capacitors 10 pF Chip Capacitors 100 pF Chip Capacitor 2.2 pF Chip Capacitors 1.5 pF Chip Capacitors 1.0 pF Chip Capacitors 0.5 pF Chip Capacitor 330 F, 35 V Electrolytic Capacitors 6.8 nH Chip Inductors 2.5 nH, 1 Turn Inductors 50 , 1/8 W Chip Resistor 1000 , 1/10 W Chip Resistors 10 , 1/10 W Chip Resistors 1900 MHz Band 90, 3 dB Chip Hybrid Coupler 0.020, r = 3.5 Part Number GRM55DR61H106KA88L GRM21BR71H104KA01B ATC600F100JT250XT ATC600F101JT250XT ATC600F2R2BT250XT ATC600F1R5BT250XT ATC600F1R0BT250XT ATC600F0R5BT250XT MCGPR35V337M10X16--RH 0805CS--060XJLB A01TKLC SG732ATTDD51R0F SG731JTTDD1001F CRCW060310R0FKEA GSC351--HYB1900 RO4350B Manufacturer Murata Murata ATC ATC ATC ATC ATC ATC Panasonic CoilCraft CoilCraft KOA Speer KOA Speer Vishay SOSHIN Rogers
MD7IC18120NR1 MD7IC18120GNR1 RF Device Data Freescale Semiconductor 5
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Single--ended

4 4
Quadrature combined
4
Doherty
2
2
Push--pull
Figure 4. Possible Circuit Topologies
MD7IC18120NR1 MD7IC18120GNR1 6 RF Device Data Freescale Semiconductor
TYPICAL CHARACTERISTICS
38 VDD = 28 Vdc, Pout = 30 W (Avg.), IDQ1A = 70 mA PAE IDQ1B = 160 mA, IDQ2B = 500 mA, VGS2A = 1.7 Vdc 37 36 Single--Carrier W--CDMA, 3.84 MHz 35 Channel Bandwidth, Input Signal PAR = 7.5 dB @ 0.01% Probability 34 Gps on CCDF --30 PARC IRL ACPR 1780 1800 1820 1840 1860 1880 1900 f, FREQUENCY (MHz) --32 ACPR (dBc) --34 --36 --38 --40 1920 PAE, POWER ADDED EFFICIENCY (%) 27 26.8 26.6 Gps, POWER GAIN (dB) 26.4 26.2 26 25.8 25.6 25.4 25.2 25 1760
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IRL, INPUT RETURN LOSS (dB)
--5 --10 --15 --20 --25 --30
0 --0.5 --1 --1.5 --2 --2.5 PARC (dB)
Figure 5. Output Peak- -Average Ratio Compression (PARC) -toBroadband Performance @ Pout = 30 Watts Avg.
--20 --30 --40 IM5--U --50 --60 --70 IM7--L IM7--U Two--Tone Measurements (f1 + f2)/2 = Center Frequency of 1840 MHz 1 10 TWO--TONE SPACING (MHz) 100
IMD, INTERMODULATION DISTORTION (dBc)
VDD = 28 Vdc, Pout = 30 W (PEP) IDQ1A = 70 mA, IDQ1B = 160 mA IDQ2B = 500 mA, VGS2A = 1.7 Vdc
IM3--L IM3--U IM5--L
Figure 6. Intermodulation Distortion Products versus Two-Tone Spacing
27 OUTPUT COMPRESSION AT 0.01% PROBABILITY ON CCDF (dB) 26.5 Gps, POWER GAIN (dB) 26 25.5 25 24.5 24 1 0 --1 --2 --3 PAE --4 --5 ACPR 20 30 40 50 60 70 --1 dB = 34 W --2 dB = 44 W --3 dB = 58 W Gps 34 PARC 30 26 Pout, OUTPUT POWER (WATTS) 50 VDD = 28 Vdc, IDQ1A = 70 mA, IDQ1B = 160 mA, IDQ2B = 500 mA VGS2A = 1.7 Vdc, f = 1840 MHz, Single--Carrier W--CDMA 46 3.84 MHz Channel Bandwidth, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF 42 38 --27 PAE, POWER ADDED EFFICIENCY (%) --29 --31 --33 --35 --37 --39 ACPR (dBc)
Figure 7. Output Peak- -Average Ratio -toCompression (PARC) versus Output Power
MD7IC18120NR1 MD7IC18120GNR1 RF Device Data Freescale Semiconductor 7
TYPICAL CHARACTERISTICS
28 27 Gps, POWER GAIN (dB) 26 25 24 23 22 1 Gps 1880 MHz 1805 MHz 1805 MHz 1840 MHz 60 PAE, POWER ADDED EFFICIENCY (%) 50 40 30 20 10 0 100 0 --10 --20 --30 --40 --50 --60 ACPR (dBc)
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VDD = 28 Vdc, IDQ1A = 70 mA, IDQ1B = 160 mA IDQ2B = 500 mA, VGS2A = 1.7 Vdc Single--Carrier W--CDMA 1880 MHz 3.84 MHz Channel Bandwidth Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF ACPR PAE 10 Pout, OUTPUT POWER (WATTS) AVG. 1840 MHz 1805 MHz
Figure 8. Single-Carrier W-CDMA Power Gain, Power Added Efficiency and ACPR versus Output Power
30 25 20 GAIN (dB) 15 10 5 0 1500 IRL VDD = 28 Vdc Pin = 0 dBm IDQ1A = 70 mA, IDQ1B = 160 mA IDQ2B = 500 mA, VGS2A = 1.7 Vdc 1625 1750 1875 2000 2125 2250 2375 Gain 0 --6 --12 --18 --24 --30 --36 2500 IRL (dB) 3.84 MHz Channel BW
f, FREQUENCY (MHz)
Figure 9. Broadband Frequency Response
W-CDMA TEST SIGNAL
100 10 PROBABILITY (%) 1 Input Signal 0.1 (dB) W--CDMA. ACPR Measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF 0 1 2 3 4 5 6 7 8 9 10 PEAK--TO--AVERAGE (dB) 0.01 0.001 0.0001 10 0 --10 --20 --30 --40 --50 --60 --70 --80 --90 --100 --9 --7.2 --5.4 --3.6 --1.8 0 1.8 3.6 5.4 7.2 9 f, FREQUENCY (MHz) --ACPR in 3.84 MHz Integrated BW +ACPR in 3.84 MHz Integrated BW
Figure 10. CCDF W-CDMA IQ Magnitude Clipping, Single-Carrier Test Signal MD7IC18120NR1 MD7IC18120GNR1 8
Figure 11. Single-Carrier W-CDMA Spectrum RF Device Data Freescale Semiconductor
VDD = 28 Vdc, IDQ1B = 120 mA, IDQ2B = 450 mA f MHz 1805 1840 Max Pout Watts 68 69
(1)
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dBm 48.3 48.4
Zin 56.20 + j3.50 60.80 -- j6.10
Zload 2.79 -- j5.39 2.81 -- j5.45
1880 74 48.7 57.90 -- j12.00 2.41 -- j5.63 (1) Maximum output power measurement reflects pulsed 1 dB gain compression. Zin = Device input impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Device Under Test Output Matching Network
Z
in
Z
load
Figure 12. Maximum Output Power -- Doherty Load Pull Optimization for Carrier Side
VDD = 28 Vdc, IDQ1B = 120 mA, IDQ2B = 450 mA f MHz 1805 1840 Max Eff. (1) % 53.3 53.4 Zin 56.20 + j3.50 60.80 -- j6.10 Zload 4.10 -- j4.49 3.74 -- j4.54
1880 54.0 57.90 -- j12.00 3.65 -- j4.55 (1) Maximum efficiency measurement reflects pulsed 1 dB gain compression. Zin = Device input impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Device Under Test Output Matching Network
Z
in
Z
load
Figure 13. Maximum Efficiency -- Doherty Load Pull Optimization for Carrier Side
MD7IC18120NR1 MD7IC18120GNR1 RF Device Data Freescale Semiconductor 9
ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS
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60 58 Pout, OUTPUT POWER (dBm) 56 54 52 50 48 46 44 42 40 38 9
VDD = 28 Vdc, IDQ1B = 120 mA, IDQ2B = 450 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle
Ideal Actual 1805 MHz 1840 MHz 1880 MHz 1880 MHz
1840 MHz 1805 MHz 11 13 15 17 19
21
23
25
27
29
31
Pin, INPUT POWER (dBm) NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V f (MHz) 1805 1840 1880 P1dB Watts 70 69 74 dBm 48.5 48.4 48.7 P3dB Watts 89 89 85 dBm 49.5 49.5 49.3
Test Impedances per Compression Level f (MHz) 1805 1840 1880 P1dB P1dB P1dB Zsource 56.20 -- j3.50 60.80 + j6.10 57.90 + j12.00 Zload 2.80 -- j5.40 2.80 -- j5.40 2.40 -- j5.60
Figure 14. Pulsed CW Output Power versus Input Power @ 28 V
NOTE: Measurement made on the Class AB, carrier side of the device.
MD7IC18120NR1 MD7IC18120GNR1 10 RF Device Data Freescale Semiconductor
PACKAGE DIMENSIONS
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PRODUCT DOCUMENTATION AND SOFTWARE
Refer to the following documents, tools and software to aid your design process. Application Notes * AN1955: Thermal Measurement Methodology of RF Power Amplifiers * AN1977: Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family * AN1987: Quiescent Current Control for the RF Integrated Circuit Device Family Engineering Bulletins * EB212: Using Data Sheet Impedances for RF LDMOS Devices Software * Electromigration MTTF Calculator * RF High Power Model * .s2p File
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For Software, do a Part Number search at http://www.freescale.com, and select the "Part Number" link. Go to the Software & Tools tab on the part's Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision 0 Date May 2010 * Initial Release of Data Sheet Description
MD7IC18120NR1 MD7IC18120GNR1 RF Device Data Freescale Semiconductor 17
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MD7IC18120NR1 MD7IC18120GNR1
Rev. 18 0, 5/2010 Document Number: MD7IC18120N
RF Device Data Freescale Semiconductor

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